Netsol MRAM: High-speed Unified Memory

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Non-volatile, High-speed Random Access Memory

Netsol MRAM works like SRAM and stores like ROM/Flash.

The Unified Memory Solution for Code Storage, Working, Data Logging and Back-up Memory

With high endurance, fast access and long retention, you can replace both "working memory" (typical SRAM or DRAM) and "code storage" (typical NOR, Flash or E²PROM) with just a single Netsol MRAM memory chip.

Versatile and Competitively Priced Memory

Due to the efficient and innovative STT-MRAM manufacturing process, Netsol MRAM is extremely competitively priced compared to other memory solutions.

Why Use MRAM?

Magnetoresistive Random Access Memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains.

MRAM technology offers the following advantages over other technologies:

High Speed

MRAM is fast enough to perform as working memory.

Non-volatile

MRAM data is maintained without power.

No Battery or Capacitor

MRAM requires no battery or Supercap backup.

Unified Solution

Replace two different memories with just one.

Advantages Over NOR Memory

MRAM uses OTA (Over The Air) for a Much Faster write speed than NOR, with no extra RAM required.

MRAM’s longer write endurance means it lasts longer than NOR.

MRAM provides 1 Byte access for efficient storage area utilization. For example, 32Mb NOR would be replaced with 16Mb MRAM.

IoT Terminal Example:

netsol-mram-vs-nor.png
  NOR STT-MRAM
Write Speed SPI: 250ms~400ms (1ms=106ns)
PPI: 0.7s~2s (1s=109ns)
SPI: 390ns
PPI: 35ns~300ns
Write Endurance 105 cycles
1014 cycles
Min. Writable Data size SPI: 4K Byte + 1 Byte
PPI: 16K Byte + 1 Byte
(Sector Erase + Program)
1 Byte

Advantages Over SRAM

MRAM removes the need for a backup battery, battery socket, Supercapacitor or Vcc monitor circuit.

The streamlined design and simple SMT process result in a far reduced Cost of Quality over SRAM.

MRAM has a retention time of 10 years, compared to SRAM’s battery life of 7 years.

Battery Backup System Example:

netsol-mram-vs-sram.png
  SRAM STT-MRAM
Write Speed
(PPI interface)
55ns~70ns 35ns~300ns
Battery Requirement YES
NO
Retention Time 7 years
(Battery Life Time)
10 years

Contact us today for further details, sample requests and order enquiries.

Profusion is an authorised seller of Netsol components.