UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET
Sku:
UT4101G-AE3-R
- Fast switching speed
- Low on resistance
- Low gate voltage operation
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
| Drain Source Voltage | -20V |
|---|---|
| Drain Current | -2.4A |
| Power | 1.25W |
| On-state Resistance | 0.21Ω |
| Reverse Recovery Time | 12.8ns |
| Total Gate Charge (Qg) | 7.5nC |
| Part Description | - |
European Union Customers
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Deliveries to the EU will be dispatched from the UK via our distribution hub in the Netherlands. You will receive tracking information direct from our courier company when the goods leave the distribution hub.
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All prices shown exclude VAT.