UT3419G-AE3-R P Channel Enchancement Mode Power Mosfet
Sku:
UT3419G-AE3-R
- RDS(ON) ≤ 75mΩ @ VGS=-10V, ID=-3.5A
- RDS(ON) ≤ 95mΩ @ VGS=-4.5V, ID=-3.0A
- RDS(ON) ≤ 145mΩ @ VGS=-2.8V, ID=-1.0A
The UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V.
The part can be applied in PWM applications or used as a load switch.
| Drain Source Voltage | -20V |
|---|---|
| Drain Current | -μ0.5A |
| Power | 1.4W |
| On-state Resistance | 0.059Ω |
| Reverse Recovery Time | 9.8ns |
| Total Gate Charge (Qg) | 5.5nC |
| Part Description | - |
European Union Customers
Orders to European countries are delivered by a tracked courier at a rate of €19.50 (5-7 working days).
Deliveries to the EU will be dispatched from the UK via our distribution hub in the Netherlands. You will receive tracking information direct from our courier company when the goods leave the distribution hub.
Using this method means there is no need for you to clear your goods through customs, and VAT will be charged on your invoice in accordance with EU VAT regulations – If you are VAT registered, VAT is 0% using the Reverse Charge rules. If you are not a VAT registered business, VAT is charged at your country’s standard rate.
All prices shown exclude VAT.
