Discrete Semiconductors
DISCR-SEMI
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- Drain Source Voltage -20V Remove This Item
- Reverse Recovery Time 12.8ns Remove This Item
| Part Number | Package | Part Title | Series/Family | Recommended For New Design | Availability | Pricing | Data Sheet | Brand | Drain Source Voltage | Drain Current | Power | Reverse Recovery Time | Total Gate Charge (Qg) | On-state Resistance | Project List | Compare | Purchase |
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UT4101G-AE3-R
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SOT23
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UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET | UT4101G | Unisonic | -20V | -2.4A | 1.25W | 12.8ns | 7.5nC | 0.21Ω | Details |