UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET
Product Code:
UT4101G-AE3-R
- Fast switching speed
- Low on resistance
- Low gate voltage operation
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
| Drain Source Voltage | -20V |
|---|---|
| Drain Current | -2.4A |
| Power | 1.25W |
| On-state Resistance | 0.21Ω |
| Reverse Recovery Time | 12.8ns |
| Total Gate Charge (Qg) | 7.5nC |
| Part Description | - |
European Union Customers
Orders to European countries are delivered by a tracked courier at a rate of €19.50 (5-7 working days).
Deliveries to the EU will be dispatched from the UK via our distribution hub in the Netherlands. You will receive tracking information direct from our courier company when the goods leave the distribution hub.
Using this method means there is no need for you to clear your goods through customs, and VAT will be charged on your invoice in accordance with EU VAT regulations – If you are VAT registered, VAT is 0% using the Reverse Charge rules. If you are not a VAT registered business, VAT is charged at your country’s standard rate.
All prices shown exclude VAT.