8NM120G-TN3-R N-channel Super-Junction MOSFET 8A 1200V
Sku:
8NM120G-TN3-R
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- Low Cost
Unisonic Super Junction MOSFETs have low on-state resistance and high voltage ratings with rugged avalanche characteristics. They are designed for fast and efficient switching with low gate charge and fast recovery times.
Super Junction Silicon MOSFETs offer a cost advantage over Silicon Carbide (SiC) and Gallium Nitride (GaN) MOSFETs.
They are ideally suited to power conversion in AC-DC converters and high voltage DC-DC Converters.
| Drain Source Voltage | 1200V |
|---|---|
| Drain Current | 8A |
| Power | 42W |
| On-state Resistance | 1.35Ω |
| Reverse Recovery Time | - |
| Total Gate Charge (Qg) | 52nC |
| Part Description | Super-junction MOSFET |
Applications
European Union Customers
Orders to European countries are delivered by a tracked courier at a rate of €19.50 (5-7 working days).
Deliveries to the EU will be dispatched from the UK via our distribution hub in the Netherlands. You will receive tracking information direct from our courier company when the goods leave the distribution hub.
Using this method means there is no need for you to clear your goods through customs, and VAT will be charged on your invoice in accordance with EU VAT regulations – If you are VAT registered, VAT is 0% using the Reverse Charge rules. If you are not a VAT registered business, VAT is charged at your country’s standard rate.
All prices shown exclude VAT.